PSMN3R7-100BSEJ MOSFET Transistor
PSMN3R7-100BSEJ MOSFET Transistor

PSMN3R7-100BSEJ MOSFET Transistor

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₹350(inc. GST)

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation
  • Low RDSon for low I2R conduction losses

DataSheet

Availability: 70 in stock SKU: BIM269 Category:

Description

The PSMN3R7-100BSE is an N-channel enhancement mode MOSFET in a D2PAK package, designed to operate reliably at temperatures up to 175 °C. As part of Nexperia’s “NextPower Live” portfolio, it boasts low on-state resistance (RDSon) for minimized conduction losses (I2R), and its strong linear-mode performance in the Safe Operating Area (SOA) makes it well-suited for applications requiring robust handling of inrush currents during turn-on. Additionally, it complements the latest “hot-swap” controllers and is fully optimized for superior linear mode operation, ensuring optimum efficiency when turned fully ON.

Specification

Product Category MOSFET
Mounting Style SMD/SMT
Package/Case D2PAK-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 100 V
Id – Continuous Drain Current 120 A
Rds On – Drain-Source Resistance 3.95 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2 V
Qg – Gate Charge 246 nC
Operating Temperature -55C ~ +175C
Pd – Power Dissipation 405 W
Rise Time 64 ns

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