PSMN3R7-100BSEJ MOSFET Transistor
₹350(inc. GST)
- Fully optimized Safe Operating Area (SOA) for superior linear mode operation
- Low RDSon for low I2R conduction losses
DataSheet
- Description
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Description
The PSMN3R7-100BSE is an N-channel enhancement mode MOSFET in a D2PAK package, designed to operate reliably at temperatures up to 175 °C. As part of Nexperia’s “NextPower Live” portfolio, it boasts low on-state resistance (RDSon) for minimized conduction losses (I2R), and its strong linear-mode performance in the Safe Operating Area (SOA) makes it well-suited for applications requiring robust handling of inrush currents during turn-on. Additionally, it complements the latest “hot-swap” controllers and is fully optimized for superior linear mode operation, ensuring optimum efficiency when turned fully ON.
Specification
| Product Category | MOSFET |
| Mounting Style | SMD/SMT |
| Package/Case | D2PAK-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 100 V |
| Id – Continuous Drain Current | 120 A |
| Rds On – Drain-Source Resistance | 3.95 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage | 2 V |
| Qg – Gate Charge | 246 nC |
| Operating Temperature | -55C ~ +175C |
| Pd – Power Dissipation | 405 W |
| Rise Time | 64 ns |
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