IPD135N03 N-Channel MOSFET Transistor

65(inc. GST)

  • IPD135N03 N-Channel MOSFET Transistor

DataSheet

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Description

This N-channel MOSFET transistor is designed for surface mounting and features a TO-252-3 package. It has a drain-source breakdown voltage of 30V, can handle a continuous drain current of 30A, and presents a low on-resistance of 13.5 mOhms when fully on. The gate-source voltage range is from -20V to +20V, with a gate-source threshold voltage of 2.2V. Operating between -55°C and +175°C, it offers a power dissipation of 31W. This MOSFET demonstrates quick switching with a fall time of 2.2 ns and a rise time of 3 ns. Additionally, it boasts a minimum forward transconductance of 22 S and is designed for reliable performance across various applications, such as power electronics and motor control.

 

Specification

Product Category MOSFET
Mounting Style SMD/SMT
Package/Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 30 V
Id – Continuous Drain Current 30 A
Rds On – Drain-Source Resistance 13.5 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2.2 V
Qg – Gate Charge 6.4 nC
Operating Temperature – 55 C to + 175 C
Pd – Power Dissipation 31 W
Fall Time 2.2 ns
Forward Transconductance – Min 22 S
Rise Time 3 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 3 ns

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