AO3400A N-Channel MOSFET Transistor

8(inc. GST)

  • AO3400A N-Channel MOSFET Transistor

DataSheet

Availability: 494 in stock SKU: BIM416 Category:

Description

The AO3400A employs advanced trench MOSFET technology and a low-resistance package, resulting in remarkably low RDS (ON). It is well-suited for use as a load switch or in PWM applications. At a VGS of 10V, it can handle a current (ID) of 5.7A with an RDS (ON) of less than 26.5mΩ. At VGS of 4.5V, the RDS (ON) is under 32mΩ, and at VGS of 2.5V, it is less than 48mΩ.

Specification

Category Transistor
FET Type N-Channel
Technology MOSFET
Drain to Source Voltage (Vdss) 30 V
Current – Continuous Drain (Id) 5.7A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) at Id, Vgs 26.5mOhm at 5.7A, 10V
Vgs(th) (Max) 1.5V at 250µA
Gate Charge (Qg) (Max) 7 nC at 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) 630 pF at 15 V
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

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