STP55NF06 MOSFET Transistor
₹22(inc. GST)
- P55NF06 is a MOSFETs transistor
- 1 channel with N-Channel transistor polarity
- Through Hole mounting style
- TO-220-3 Package
DataSheet
- Description
- Reviews (0)
Description
P55NF06 power MOSFETs, STripFET process for minimal input capacitance and gate charge Ideal for high-efficiency DC-DC converters in telecom, computer, and low-gate charge driving applications
Features 1 channel with N-channel transistor polarity, offering a drain-source breakdown voltage of 60V and a continuous drain current of 50A. Its drain-source resistance is 0.018 Ohms, and it operates with a gate-source voltage of 20V. With a gate charge of 60 nC, it performs well across an operating temperature range of -55°C to 175°C, boasting a power dissipation capability of 110W.
Specification
| Product Category | MOSFET |
| Mounting Style | Through Hole |
| Package/Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 60 V |
| Id – Continuous Drain Current | 50 A |
| Rds On – Drain-Source Resistance | 18 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage | 2 V |
| Qg – Gate Charge | 44.5 nC |
| Operating Temperature | -55C to +175C |
| Pd – Power Dissipation | 110 W |
| Fall Time | 15 ns |
| Forward Transconductance – Min | 18 S |
| Rise Time | 50 ns |
| Typical Turn-Off Delay Time | 36 ns |
| Typical Turn-On Delay Time | 20 ns |
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