IPD135N03 N-Channel MOSFET Transistor
₹65(inc. GST)
- IPD135N03 N-Channel MOSFET Transistor
DataSheet
- Description
- Reviews (0)
Description
This N-channel MOSFET transistor is designed for surface mounting and features a TO-252-3 package. It has a drain-source breakdown voltage of 30V, can handle a continuous drain current of 30A, and presents a low on-resistance of 13.5 mOhms when fully on. The gate-source voltage range is from -20V to +20V, with a gate-source threshold voltage of 2.2V. Operating between -55°C and +175°C, it offers a power dissipation of 31W. This MOSFET demonstrates quick switching with a fall time of 2.2 ns and a rise time of 3 ns. Additionally, it boasts a minimum forward transconductance of 22 S and is designed for reliable performance across various applications, such as power electronics and motor control.
Specification
| Product Category | MOSFET |
| Mounting Style | SMD/SMT |
| Package/Case | TO-252-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 30 V |
| Id – Continuous Drain Current | 30 A |
| Rds On – Drain-Source Resistance | 13.5 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage | 2.2 V |
| Qg – Gate Charge | 6.4 nC |
| Operating Temperature | – 55 C to + 175 C |
| Pd – Power Dissipation | 31 W |
| Fall Time | 2.2 ns |
| Forward Transconductance – Min | 22 S |
| Rise Time | 3 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 3 ns |
Reviews
There are no reviews yet.